
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Tj(°C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
0
50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
VFP(V)
IF=IF(av)
Tj=125°C
dIF/dt(A/s)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode).
0
50 100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
tfr(ns)
IF=IF(av)
VFR=1.1*VFmax
Tj=125°C
dIF/dt(A/s)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
STTH12003TV
4/5