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參數(shù)資料
| 型號： | W26L11 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K×16bit CMOS Static RAM(64K×16位CMOS靜態(tài)RAM) |
| 中文描述： | 64K的× 16位的CMOS靜態(tài)RAM（64K的× 16位的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 134K |
| 代理商： | W26L11 |
Preliminary W26L11
- 2 -
TRUTH TABLE
CS
H
L
L
L
L
L
L
L
L
OE
WE
X
H
H
H
H
L
L
L
X
LB
UB
MODE
I/O1 I/O8
I/O9 I/O16
V
DD
CURRENT
X
H
L
L
L
X
X
X
X
X
X
L
L
H
L
L
H
H
X
X
L
H
L
L
H
L
H
Not Selected
Output Disable
2 Bytes Read
Lower Byte Read
Upper Byte Read
2 Bytes Write
Lower Byte Write
Upper Byte Write
Output Disable
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
High Z
High Z
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
High Z
D
IN
High Z
I
SB
, I
SB
1
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
1
-65 to +150
0 to +70
UNIT
V
V
W
°
C
°
C
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 2.7~3.6, V
SS
= 0V; T
A
(
°
C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Low Voltage
V
IL
-
-0.3
-
+0.4
Input High Voltage
V
IH
-
+2.2
-
V
DD
+0.3
V
Input Leakage Current
I
LI
V
DD
= Max.
V
IN
= V
SS
to V
DD
-1
-
+1
μ
A
Output Leakage Current
I
LO
V
DD
= Max.
CS = V
IH
(min.)
V
OUT
= 0V to V
DD
-1
-
+1
μ
A
Output Low Voltage
V
OL
V
DD
= Min, I
OL
= 2.1 mA
-
-
0.4
V
Output Low Voltage
V
OH
V
DD
= Min, V
OH
= -1 mA
2.4
-
-
V
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