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參數資料
| 型號： | W26NM60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.125ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET |
| 中文描述： | N溝道600V的- 0.125ohm - 26A條至247齊納商標保護的MDmesh功率MOSFET |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 187K |
| 代理商： | W26NM60 |
3/9
STW26NM60
Table 7: On /Off
Symbol
V
(BR)DSS
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
Parameter
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
= ± 20 V
10
100
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
± 10
μA
V
GS(th)
R
DS(on
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 13 A
3
4
5
V
Static Drain-source On
Resistance
0.125
0.135
Parameter
Test Conditions
V
DS
= 15 V , I
D
= 13 A
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
20
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
2900
900
40
pF
pF
pF
C
OSS eq
(3)
.
V
GS
= 0 V, V
DS
= 0 to 400 V
300
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 300 V, I
D
= 13 A,
R
G
= 4.7
,
V
GS
= 10 V
(see Figure 15)
35
22
14
20
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 26 A,
V
GS
= 10 V
(see Figure 18)
73
20
37
102
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
26
104
Unit
A
A
Source-drain Current
I
SD
= 26 A, V
GS
= 0
I
SD
= 26 A, di/dt = 100 A/μs
V
DD
= 100V
(see Figure 16)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
450
7
30.5
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 26 A, di/dt = 100 A/μs
V
DD
= 100V, T
j
= 150
°
C
(see Figure 16)
560
9
32.5
ns
μC
A
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