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參數資料
| 型號： | W27C512 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 64K X 8 ELECTRICALLY ERASABLE EPROM |
| 中文描述： | 64KX8的電可擦除只讀存儲器 |
| 文件頁數： | 3/15頁 |
| 文件大小： | 161K |
| 代理商： | W27C512 |
W27C512
Publication Release Date: November 1999
- 3 -
Revision A4
Standby Mode
The standby mode significantly reduces V
CC
current. This mode is entered when CE high. In standby
mode, all outputs are in a high impedance state, independent of OE/V
PP
.
Two-line Output Control
Since EPROMs are often used in large memory arrays, the W27C512 provides two control inputs for
multiple memory connections. Two-line control provides for lowest possible memory power
dissipation and ensures that data bus contention will not occur.
System Considerations
An EPROM's power switching characteristics require careful device decoupling. System designers are
interested in three supply current issues: standby current levels (I
SB
), active current levels (I
CC
), and
transient current peaks produced by the falling and rising edges of CE. Transient current magnitudes
depend on the device output's capacitive and inductive loading. Two-line control and proper
decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1
μ
F ceramic capacitor connected between its V
CC
and GND. This high frequency, low inherent-
inductance capacitor should be placed as close as possible to the device. Additionally, for every eight
devices, a 4.7
μ
F electrolytic capacitor should be placed at the array's power supply connection
between V
CC
and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace
inductances.
TABLE OF OPERATING MODES
(V
PP
= 12V, V
PE
= 14V, V
HH
= 12V, V
CP
= 5V, V
CE
= 5V, X = V
IH
or V
IL
)
MODE
PINS
CE
OE/V
PP
A0
A9
V
CC
OUTPUTS
Read
V
IL
V
IL
X
X
V
CC
D
OUT
Output Disable
V
IL
V
IH
X
X
V
CC
High Z
Standby (TTL)
V
IH
X
X
X
V
CC
High Z
Standby (CMOS)
V
CC
±
0.3V
V
IL
X
X
X
V
CC
High Z
Program
V
PP
X
X
V
CP
D
IN
Program Verify
V
IL
V
IL
X
X
V
CC
D
OUT
Program Inhibit
V
IH
V
PP
X
X
V
CP
High Z
Erase
V
IL
V
PE
V
IL
V
PE
V
CE
D
IH
Erase Verify
V
IL
V
IL
X
X
3.75
D
OUT
Erase Inhibit
V
IH
V
PE
X
X
V
CE
High Z
Product Identifier-manufacturer
V
IL
V
IL
V
IL
V
HH
V
CC
DA (Hex)
Product Identifier-device
V
IL
V
IL
V
IH
V
HH
V
CC
08 (Hex)
相關PDF資料 |
PDF描述 |
|---|---|
| W27C512-12 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512P-90 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-45 | BOX 2.53X1.73X.65 W/3 BTNS BLK |
| W27C512P-45 | BOX 2.53X1.73X.65 W/4 BTNS BLK |
| W27C512P-70 | 64K X 8 ELECTRICALLY ERASABLE EPROM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W27C512-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-45 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-45Z | 功能描述:IC EEPROM 512KBIT 45NS 28DIP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| W27C512-70 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
| W27C512-90 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 8 ELECTRICALLY ERASABLE EPROM |
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