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| 型號(hào)： | W28F641BB80L |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA48 |
| 封裝： | 8 X 11 MM, 0.75 MM PITCH, TFBGA-48 |
| 文件頁(yè)數(shù)： | 27/31頁(yè) |
| 文件大小： | 389K |
| 代理商： | W28F641BB80L |
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W28F641B/T
Publication Release Date: March 27, 2003
4. A latency time is required from writing suspend command (#WE or #CE going high) until SR.7 going "1".
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
t
ERES
and its sequence is repeated, the block erase operation may not be finished.
5. ADDITIONAL INFORMATION
Recommended Operating Conditions
At Device Power-Up
AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at
device power-up. If the timing in the figure is ignored, the device may not operate correctly.
VIH
VIL
DD
VIH
VIL
VIH
VIL
#OE
Valid Address
V
DD
V
Vss
(min)
t
VR
t
2VPH
t
PHQV
#RESET(p)
*1
Vpp
(V)
Vss
V
PPH1/2
ADDRESS
VIH
VIL
(A)
t
t
R or F
t
t
R or F
t
AVQV
#CE
(E)
t
R
t
F
t
ELQV
t
GLQV
#WE
(W)
VIH
VIL
(G)
t
F
t
R
#WP
(S)
VIH
VIL
DATA (D/Q)
VOH
VOL
Valid Output
HIGH Z
*1 To prevent the unwanted writes, system designers should consider the design, which applies V
PP
to 0V during read
operations and V
PPH1/2
during write or erase operations.
Figure A-1. AC Timing at Device Power-up
For the AC specifications t
VR
, t
R
, t
F
in the figure, refer to the next page. See the “ELECTRICAL SPECIFICATIONS“ described in
specifications for the supply voltage range, the operating temperature and the AC specifications not shown in the next page.
- 27 -
Revision A3
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| W28F641BT80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
| W28F641TB80L | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY |
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