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參數(shù)資料
型號(hào)： W28V400T
廠商： WINBOND ELECTRONICS CORP
英文描述： 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述： 4分（為512k × 8/256K × 16）SMARTVOLTA通用閃存
文件頁(yè)數(shù)： 23/48頁(yè)
文件大?。?/td> 1822K
代理商： W28V400T
W28V400B/T
Publication Release Date: April 11, 2003
- 23 -
Revision A4
transitions to V
IL
during block erase or word/byte write, RY/#BY will remain low until the reset
operation is complete. Then, the operation will abort and the device will enter deep power-down. The
aborted operation may leave data partially altered. Therefore, the command sequence must be
repeated after normal operation is restored. Device power-off or #RESET transitions to V
IL
clear the
status register.
The CUI latches commands issued by system software and is not altered by V
PP
or #CE transitions or
WSM actions. Its state is read array mode upon power-up, after exit from deep power-down or after
V
DD
transitions below V
LKO
.
After block erase or word/byte write, even after V
PP
transitions down to V
PPLK
, the CUI must be placed
in read array mode via the Read Array command if subsequent access to the memory array is
desired.
Power-up/Down Protection
The device is designed to offer protection against accidental block erasure or word/byte writing during
power transitions. Upon power-up, the device is indifferent as to which power supply (V
PP
or V
DD
)
powers-up first. Internal circuitry resets the CUI to read array mode at power-up. A system designer
must guard against spurious writes for V
DD
voltages above V
LKO
when V
PP
is active. Since both #WE
and #CE must be low for a command write, driving either to V
IH
will inhibit writes. The CUI’s two-step
command sequence architecture provides added level of protection against data alteration.
#WP provide additional protection from inadvertent code or data alteration. The device is disabled
while #RESET = V
IL
regardless of its control inputs state.
Power Dissipation
When designing portable systems, designers must consider battery power consumption not only
during device operation, but also for data retention during system idle time. Flash memory’s non-
volatility increases usable battery life because data is retained when system power is removed.
In addition, deep power-down mode ensures extremely low power consumption even when system
power is applied. For example, portable computing products and other power sensitive applications
that use an array of devices for solid-state storage can consume negligible power by lowering
#RESET to V
IL
standby or sleep modes. If access is again needed, the devices can be read following
the t
PHQV
and t
PHWL
wake-up cycles required after #RESET is first raised to V
IH
.
See AC Characteristics
- Read Only and Write Operations and Figures 13, 14, 15 and 16 for more information.
相關(guān)PDF資料
PDF描述
W28V400TT85C 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
W29C011AP-15 128K X 8 CMOS FLASH MEMORY
W29C011AS-15 128K X 8 CMOS FLASH MEMORY
W29C011A 128K X 8 CMOS FLASH MEMORY
W29C011A-15 128K X 8 CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W28V400TT85C 制造商:WINBOND 制造商全稱:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
W28WH 制造商:ETERNA 功能描述:TRACKLIGHT, FLEXIBLE TRACK COUPLER
W28-X01B-3 制造商:TE Connectivity 功能描述:
W28-X1015-3.70 功能描述:斷路器 W28-X1015-3.70=W28 RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Device Circuit Breakers 產(chǎn)品類(lèi)型:Thermomagnetic 電流額定值:2 A 電壓額定值 AC:240 V, 277 V 電壓額定值 DC:50 V 極數(shù):1 Pole 執(zhí)行器類(lèi)型:Slide 電路功能:Trip Free 系列:CB TM1 工作溫度范圍:- 30 C to + 60 C 照明:No
W28-X1024-3.20 功能描述:斷路器 CIRCUIT BREAKER THERMAL 32VDC 250VAC RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Device Circuit Breakers 產(chǎn)品類(lèi)型:Thermomagnetic 電流額定值:2 A 電壓額定值 AC:240 V, 277 V 電壓額定值 DC:50 V 極數(shù):1 Pole 執(zhí)行器類(lèi)型:Slide 電路功能:Trip Free 系列:CB TM1 工作溫度范圍:- 30 C to + 60 C 照明:No
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