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參數資料
| 型號： | W39L040A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 512K 】 8 CMOS FLASH MEMORY |
| 中文描述： | 為512k】8的CMOS閃存 |
| 文件頁數： | 14/26頁 |
| 文件大小： | 231K |
| 代理商： | W39L040A |
W39L040A
- 14 -
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
PARAMETER
RATING
0 to +70
UNIT
°
C
°
C
V
V
V
Operating Temperature
Storage Temperature
Power Supply Voltage to V
SS
Potential
Voltage on Any Pin to Ground Potential except A9
Voltage on A9, #OE Pin to Ground Potential
-65 to +150
-0.5 to V
DD
+0.5
-0.5 to +4.0
-0.5 to +12.5
Note:
Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability
of the device.
7.2 DC Operating Characteristics
(V
DD
= 3.0 ~ 3.6V for 70 nS or V
DD
= 2.7 ~ 3.6V for 90 nS, V
SS
= 0V, T
A
= 0 to 70
°
C)
LIMITS
TYP.
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Power Supply Read
Current
I
DD1
#CE = V
IL
, #OE = V
IH
, at f = 5
MHz
-
7
12
mA
Power Supply Write
Current
I
DD2
#CE = V
IL
, #OE = V
IH
-
15
30
mA
Standby V
DD
Current
I
SB
#CE = V
DD
±
0.3V
-
0.2
5
μ
A
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
I
LI
V
IN
= V
SS
to V
DD,
V
DD
= V
DD
max.
-
-
±
1
μ
A
I
LO
V
OUT
= V
SS
to V
DD,
V
DD
= V
DD
max.
-
-
±
1
μ
A
V
IL
V
IH
V
OL
I
OL
= 4.0 mA, V
DD
= V
DD
min.
V
OH1
I
OH
= -2.0 mA, V
DD
= V
DD
min.
V
OH2
I
OH
= -100
μ
A, V
DD
= V
DD
min.
-
-
-0.5
-
-
-
-
-
0.8
V
V
V
V
V
0.7 x V
DD
-
0.85 V
DD
V
DD
-0.4
V
DD
+0.3
0.45
-
-
Output High Voltage
7.3 Pin Capacitance
(V
DD
= 3.3V for 70 nS, or V
DD
= 3.0V for 90 nS, T
A
= 25
°
C, f = 1 MHz)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
C
IN
C
OUT
CONDITIONS
V
IN
= 0V
V
OUT
= 0V
TYP.
6
8.5
MAX.
7.5
12
UNIT
pF
pF
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