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參數(shù)資料
| 型號： | W82MV-NSBC |
| 英文描述： | 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE |
| 中文描述： | 2Mx32 SRAM的3.3多芯片封裝 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 222K |
| 代理商： | W82MV-NSBC |
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W82M32V-XBX
April, 2006
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
CAPACITANCE
(TA = +25°C)
Parameter
OE# capacitance
WE#1-4 capacitance
CS#1-4 capacitance
Data I/O capacitance
Address input capacitance
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MH
Z
V
IN
= 0 V, f = 1.0 MH
Z
V
IN
= 0 V, f = 1.0 MH
Z
V
I/O
= 0 V, f = 1.0 MH
Z
V
IN
= 0 V, f = 1.0 MH
Z
Max Unit
30
10
10
10
30
pF
pF
pF
pF
pF
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
-0.5
CS#
H
L
L
L
OE#
X
L
X
H
WE#
X
H
L
H
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 3.3V ± 0.3V, -55°C ≤ TA ≤ 125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current (x 32 Mode)
Standby Current
Output Low Voltage
Output High Voltage
Sym
I
LI
I
LO
I
CC
x 32
I
SB
V
OL
V
OH
Conditions
V
IN
= GND to V
CC
Min
Max
10
10
1100
400
0.4
Units
μA
μA
mA
mA
V
V
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MH
Z
, V
CC
= 3.6V
CS# = V
IH
, OE# = V
IH
, f = 5MH
Z
, V
CC
= 3.6V
I
OL
= 8mA
I
OH
= -4.0mA
2.4
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
NOTE: Contact factory for low power option.
This parameter is guaranteed by design but not tested.
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