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參數資料
| 型號： | W8NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET |
| 中文描述： | ? -頻道800V的- 1.2ohm - 7.5A的-對MOSFET的247 PowerMESH |
| 文件頁數： | 2/5頁 |
| 文件大小： | 50K |
| 代理商： | W8NB80 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.73
30
0.1
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
7.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
680
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
800
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 100
o
C
1
50
μ
A
μ
A
nA
I
GSS
V
GS
=
±
30 V
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V I
D
= 3.7 A
1.2
1.6
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7.5
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.7 A
1.5
6.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
1400
180
20
pF
pF
pF
STW8NB80
2/5
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