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參數(shù)資料
型號(hào): W981216AH
廠商: WINBOND ELECTRONICS CORP
英文描述: 2M x 16 bit x 4 Banks SDRAM
中文描述: 200萬× 16位× 4個(gè)銀行內(nèi)存
文件頁數(shù): 12/44頁
文件大小: 2173K
代理商: W981216AH
W981216AH
2M x 16 bit x 4 Banks SDRAM
Revision 1.0 Publication Release Date: March, 1999
- 12 -
Table 2 Address Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
n
n + 1
n + 2
n + 3
n + 4
n + 5
n + 6
n + 7
Burst Length
BL= 2 (disturb address is A0)
No address carry from A0 to A1
BL= 4 (disturb addresses are A0 and A1)
No address carry from A1 to A2
BL= 8 (disturb addresses are A0, A1 and A2)
No address carry from A2 to A3
.
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the
device. The disturb address is varied by the Burst Length as shown in Table 2.
.
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the
sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Burst Length
BL = 2
BL = 4
BL = 8
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W981216AH-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W981216AH-8H 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
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W981216BH-75 制造商:Winbond Electronics Corp 功能描述:SDRAM, 8M x 16, 54 Pin, Plastic, TSOP
W9812G2GB 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM