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參數(shù)資料
型號: W981216BH
廠商: WINBOND ELECTRONICS CORP
英文描述: 2M x 4 BANKS x 16 BIT SDRAM
中文描述: 200萬× 4銀行× 16位SDRAM
文件頁數(shù): 8/44頁
文件大?。?/td> 2173K
代理商: W981216BH
W981216AH
2M x 16 bit x 4 Banks SDRAM
Revision 1.0 Publication Release Date: March, 1999
- 8 -
NOTES:
1.
Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2.
All voltages are referenced to V
SS
3.
These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of
t
CK
and t
RC
.
4.
These parameters depend on the output loading conditions. Specified values are obtained with output open.
5.
Power up sequence is further described in the "Functional Description" section.
6.
AC TESTING CONDITIONS
Output Reference Level
Output Load
Input Signal Levels
Transition Time (Rise and Fall) of Input Signal
Input Reference Level
1.4V/1.4V
See diagram B below
2.4V/0.4V
2ns
1.4V
50 ohms
1.4 V
AC TEST LOAD (B)
Z = 50 ohms
output
AC TEST LOAD (A)
1.2K
0.87K
output
3.3 V
50pF
50pF
7. Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
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