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參數(shù)資料
| 型號： | W986416CH-75 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | x16 SDRAM |
| 中文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, TSOP2-54 |
| 文件頁數(shù)： | 3/48頁 |
| 文件大小： | 1647K |
| 代理商： | W986416CH-75 |
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W986416DH
Publication Release Date: April 11, 2002
- 3 -
Revision A4
1. GENERAL DESCRIPTION
W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words x 4 banks x 16 bits. Using pipelined architecture and 0.175
μ
m process technology,
W986416DH delivers a data bandwidth of up to 400M bytes per second (-5). For different application,
W986416DH is sorted into the following speed grades: -5, -6, -7. The -5 parts can run up to 200
MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For
handheld device application, we also provide a low power option, the grade of -7L, with Self Refresh
Current under 400
μ
A and work well at 2.7V during Self Refresh Mode. For special application, we
provide extended temperature option the grade of -6I can work well in wide temperature from -40
°
C to
85
°
C.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W986416DH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V
±
0.3V power supply
1048576 words
x 4 banks x 16 bits organization
Self Refresh Current: Standard and Low Power
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Sequential and Interleave burst
Burst read, single write operation
Byte data controlled by DQM
Power-down Mode
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80
3. AVAILABLE PART NUMBER
PART NUMBER
SPEED (CL = 3)
SELF REFRESH
CURRENT (MAX.)
OPERATING
TEMPERATURE
W986416DH-5
200 MHz
1 mA
0
°
C
70
°
C
0
°
C
70
°
C
-40
°
C
85
°
C
0
°
C
70
°
C
0
°
C
70
°
C
W986416DH-6
166 MHz
1 mA
W986416DH-6I
166 MHz
400
μ
A
1 mA
W986416DH-7
143 MHz
W986416DH-7L
143 MHz
400
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W986416CH-8H | x16 SDRAM |
| W986432DH | 512K ⅴ 4 BANKS ⅴ 32 BITS SDRAM |
| W986432AH | 512K x 4 BANKS x 32 BITS SDRAM |
| W986432AH-55 | x32 SDRAM |
| W986432AH-6 | x32 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W986416CH-8H | 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM |
| W986416DH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M X 4 BANKS X 16 BITS SDRAM |
| W986416DH-5 | 制造商:Winbond Electronics Corp 功能描述:4M X 16 SYNCHRONOUS DRAM, 4.5 ns, 54 Pin Plastic SMT |
| W986416DH-55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC |
| W986416DH-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC |
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