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參數資料
型號: WF5027CQ-4
廠商: Seiko NPC Corporation
英文描述: Crystal Oscillator Module ICs
中文描述: 晶體振蕩器模塊集成電路
文件頁數: 10/21頁
文件大小: 815K
代理商: WF5027CQ-4
WF5027 series
SEIKO NPC CORPORATION —10
For Fundamental Oscillator: High frequency version (5027
×
P to 5027
×
W)
V
DD
= 1.60 to 3.63V, V
SS
= 0V, Ta =
40 to +85
°
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
Q: Measurement cct 3, I
OH
= – 4mA
V
DD
– 0.4
V
LOW-level output voltage
V
OL
Q: Measurement cct 3, I
OL
= 4mA
0.4
V
HIGH-level input voltage
V
IH
INHN, Measurement cct 4
0.7V
DD
V
LOW-level input voltage
V
IL
INHN, Measurement cct 4
0.3V
DD
V
Output leakage current
I
Z
Q: Measurement cct 5,
INHN = LOW
V
OH
= V
DD
10
μA
V
OL
= V
SS
– 10
μA
Current consumption
*1
*1. The consumption current I
DD
(C
L
) with a load capacitance (C
L
) connected to the Q pin is given by the following equation, where I
DD
is the no-load con-
sumption current and f
OUT
is the output frequency.
I
DD
(C
L
) [mA] = I
DD
[mA] + C
L
[pF]
×
V
DD
[V]
×
f
OUT
[MHz]
×
10
–3
I
DD
5027
×
P (f
O
), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 80MHz
V
DD
= 3.3V
2.5
3.8
mA
V
DD
= 2.5V
2.0
3.0
mA
V
DD
= 1.8V
1.6
2.4
mA
5027
×
Q (f
O
/2), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 40MHz
V
DD
= 3.3V
2.4
3.6
mA
V
DD
= 2.5V
1.9
2.9
mA
V
DD
= 1.8V
1.5
2.3
mA
5027
×
R (f
O
/4), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 20MHz
V
DD
= 3.3V
1.8
2.7
mA
V
DD
= 2.5V
1.5
2.3
mA
V
DD
= 1.8V
1.2
1.6
mA
5027
×
S (f
O
/8), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 10MHz
V
DD
= 3.3V
1.7
2.6
mA
V
DD
= 2.5V
1.4
2.1
mA
V
DD
= 1.8V
1.1
1.7
mA
5027
×
T (f
O
/16), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 5MHz
V
DD
= 3.3V
1.6
2.4
mA
V
DD
= 2.5V
1.3
2.0
mA
V
DD
= 1.8V
1.0
1.5
mA
5027
×
V (f
O
/32), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 2.5MHz
V
DD
= 3.3V
1.5
2.3
mA
V
DD
= 2.5V
1.2
1.8
mA
V
DD
= 1.8V
1.0
1.5
mA
5027
×
W (f
O
/64), Measurement cct 1,
no load, INHN = open, f
O
= 80MHz,
f
OUT
= 1.25MHz
V
DD
= 3.3V
1.5
2.3
mA
V
DD
= 2.5V
1.2
1.8
mA
V
DD
= 1.8V
1.0
1.5
mA
Standby current
I
ST
Measurement cct 1, INHN = LOW
10
μA
INHN pull-up resistance
R
UP1
Measurement cct 6
0.4
1.5
8
M
R
UP2
30
70
150
k
Oscillator feedback
resistance
R
f
50
100
200
k
Oscillator capacitance
C
G
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
1.6
2
2.4
pF
C
D
3.2
4
4.8
pF
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