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參數資料
| 型號： | WFD2N60 |
| 廠商： | Wisdom Semiconductor Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 721K |
| 代理商： | WFD2N60 |
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
600
-
-
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 °C
-
0.6
-
V/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 600V, V
GS
= 0V
-
-
10
uA
V
DS
= 480V, T
C
= 125 °C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 30V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -30V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
V
GS
=10 V, I
D
= 0.9A
-
4.0
5.0
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
320
420
pF
C
oss
C
rss
Output Capacitance
-
35
46
Reverse Transfer Capacitance
Dynamic Characteristics
-
4.5
6.0
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-on Delay Time
V
DD
=300V, I
D
=2.0A, R
G
=25
(Note 4, 5)
-
8
30
ns
Rise Time
-
23
60
Turn-off Delay Time
-
25
60
Fall Time
-
28
70
Total Gate Charge
V
DS
=480V, V
GS
=10V, I
D
=2.0A
(Note 4, 5)
-
9.5
13
nC
Gate-Source Charge
-
1.6
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
4.0
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
I
SM
V
SD
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
1.8
A
Pulsed Source Current
-
-
6.0
Diode Forward Voltage
I
S
=1.8A, V
GS
=0V
-
-
1.4
V
t
rr
Reverse Recovery Time
I
S
=2.0A, V
GS
=0V, dI
F
/dt=100A/us
-
230
-
ns
Q
rr
Reverse Recovery Charge
-
1.0
-
uC
WFD/U2N60
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 68mH, I
AS
=1.8A, V
DD
= 50V, R
G
= 25
, Starting T
J
=
25°C
3. I
SD
≤
2A, di/dt
≤
200A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
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