- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363917 > WFD430 (Wisdom Semiconductor Inc.) N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | WFD430 |
| 廠商： | Wisdom Semiconductor Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 835K |
| 代理商： | WFD430 |
25
50
75
100
125
150
0
1
2
3
4
5
I
D
,
T
C
, Case Temperature [ ]
℃
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
※
1. V
GS
= 10 V
2. I
D
= 2.0 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
※
1. V
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
N otes :
1. Z
θ
2. D uty F actor, D = t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
θ
※
JC
(t) = 2.6
/W M ax.
℃
JC
(t)
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S q uare W ave P ulse D uration [sec]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WFU430 | N-Channel MOSFET |
| WFF2N60 | N-Channel MOSFET |
| WFF4N60 | N-Channel MOSFET |
| WFF634 | N-Channel MOSFET |
| WFF640 | N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WFD4N60 | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFD4N60B | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFD50EXP | 制造商:SYSTEMSENSOR 制造商全稱:SYSTEMSENSOR 功能描述:Explosion Proof Waterflow Detector |
| WFD5N50 | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFD5N60B | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。