- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363917 > WFP4N60 (Wisdom Semiconductor Inc.) N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | WFP4N60 |
| 廠商： | Wisdom Semiconductor Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 754K |
| 代理商： | WFP4N60 |
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
600
-
-
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 °C
-
0.6
-
V/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 600V, V
GS
= 0V
-
-
10
uA
V
DS
= 480V, T
C
= 125 °C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 30V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -30V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
V
GS
=10 V, I
D
= 2.0A
-
2.0
2.5
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
545
710
pF
C
oss
C
rss
Output Capacitance
-
60
80
Reverse Transfer Capacitance
Dynamic Characteristics
-
8
11
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-on Delay Time
V
DD
=300V, I
D
=4.0A, R
G
=25
(Note 4, 5)
-
10
30
ns
Rise Time
-
35
80
Turn-off Delay Time
-
45
100
Fall Time
-
40
90
Total Gate Charge
V
DS
=480V, V
GS
=10V, I
D
=4.0A
(Note 4, 5)
-
15
20
nC
Gate-Source Charge
-
2.8
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
6.2
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
I
SM
V
SD
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
4.0
A
Pulsed Source Current
-
-
16
Diode Forward Voltage
I
S
=4.0A, V
GS
=0V
-
-
1.4
V
t
rr
Reverse Recovery Time
I
S
=4.0A, V
GS
=0V, dI
F
/dt=100A/us
-
300
-
ns
Q
rr
Reverse Recovery Charge
-
2.2
-
uC
WFP4N60
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 27.5mH, I
AS
=4A, V
DD
= 50V, R
G
= 25
, Starting T
J
=
25°C
3. I
SD
≤
4A, di/dt
≤
200A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WFP50N06 | N-Channel MOSFET |
| WFP6014 | 24-Channel Buffer Amplifier(24通道的緩沖放大器) |
| WFP6131AGSR | 9/11-Channel Buffer Amplifier(9/11通道的緩沖放大器) |
| WFP630 | N-Channel MOSFET |
| WFP634 | N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WFP50N06 | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFP-5B-2 | 制造商:Winslow Adaptics Ltd 功能描述:0.8mm micro clip,short tip 制造商:Winslow Adaptics 功能描述:SHORT PROBE TIP 制造商:Winslow Adaptics Ltd 功能描述:SHORT PROBE TIP |
| WFP6131AGSR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| WFP630 | 制造商:WISDOM 制造商全稱:WISDOM 功能描述:N-Channel MOSFET |
| WFP634 | 制造商:WISDOM 制造商全稱:WISDOM 功能描述:N-Channel MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。