- 您現在的位置：買賣IC網 > PDF目錄363918 > WFP75N08 (Wisdom Semiconductor Inc.) N-Channel MOSFET PDF資料下載
參數資料
| 型號： | WFP75N08 |
| 廠商： | Wisdom Semiconductor Inc. |
| 英文描述： | N-Channel MOSFET |
| 中文描述： | N溝道MOSFET |
| 文件頁數： | 2/7頁 |
| 文件大小： | 760K |
| 代理商： | WFP75N08 |
Electrical Characteristics
( T
C
= 25 °C unless otherwise noted )
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
80
-
-
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage Temperature
coefficient
I
D
= 250uA, referenced to 25 °C
-
0.08
-
V/°C
I
DSS
Drain-Source Leakage Current
V
DS
= 80V, V
GS
= 0V
-
-
10
uA
V
DS
= 64V, T
C
= 125 °C
-
-
100
uA
I
GSS
Gate-Source Leakage, Forward
V
GS
= 20V, V
DS
= 0V
-
-
100
nA
Gate-source Leakage, Reverse
V
GS
= -20V, V
DS
= 0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
V
GS
=10 V, I
D
= 37.5A
-
0.012
0.015
C
iss
Input Capacitance
V
GS
=0 V, V
DS
=25V, f = 1MHz
-
2600
3380
pF
C
oss
C
rss
Output Capacitance
-
940
1220
Reverse Transfer Capacitance
Dynamic Characteristics
-
210
275
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Turn-on Delay Time
V
DD
=40V, I
D
=75A, R
G
=25
(Note 4, 5)
-
30
70
ns
Rise Time
-
225
460
Turn-off Delay Time
-
165
340
Fall Time
-
155
320
Total Gate Charge
V
DS
=64V, V
GS
=10V, I
D
=75A
(Note 4, 5)
-
80
105
nC
Gate-Source Charge
-
15
-
Q
gd
Gate-Drain Charge(Miller Charge)
-
32
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit.
I
S
I
SM
V
SD
Continuous Source Current
Integral Reverse p-n Junction
Diode in the MOSFET
-
-
75
A
Pulsed Source Current
-
-
300
Diode Forward Voltage
I
S
=75A, V
GS
=0V
-
-
1.5
V
t
rr
Reverse Recovery Time
I
S
=75A, V
GS
=0V, dI
F
/dt=100A/us
-
90
-
ns
Q
rr
Reverse Recovery Charge
-
250
-
uC
WFP75N08
※
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 0.32mH, I
AS
=75A, V
DD
= 25V, R
G
= 25
, Starting T
J
=
25°C
3. I
SD
≤
75A, di/dt
≤
300A/us, V
DD
≤
BV
DSS
, Starting T
J
=
25°C
4. Pulse Test : Pulse Width
≤
300us, Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
Copyright@Wisdom Semiconductor Inc., All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| WFP7N60 | N-Channel MOSFET |
| WFP830 | N-Channel MOSFET |
| WFP840 | N-Channel MOSFET |
| WFR630 | N-Channel MOSFET |
| WFW10N80 | N-Channel MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| WFP7N60 | 制造商:WISDOM 制造商全稱:WISDOM 功能描述:N-Channel MOSFET |
| WFP7N70 | 制造商:WISDOM 制造商全稱:WISDOM 功能描述:群方電子有限公司， 我公司代理經銷商FAIRCHTLD(仙童)，萬裕，威士頓，EVERLTGHT,UTC,ON,IR,TI,MPS等品牌的元器件IC,熱忱為廣大生產商提供服務，歡迎前來洽談訂購！ 聯系人： 烏小姐 TEL: 0755-23051325 QQ: 2355819029 陳小姐 TEL: 0755-28197007 QQ: 2355819022 賴小姐 TEL: 0755-83722630 QQ: 2355819025 張先生 TEL: 0755-23574585 QQ: 2355819014 FAX:0755-28199449 郵箱：2355819029@qq.com 公司網址：http://qunfangdianzi3.ic37.com/ 公司地址：深圳市福田區中航路國利大廈A座1008室 |
| WFP830 | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFP830B | 制造商:WINSEMI 制造商全稱:WINSEMI 功能描述:Silicon N-Channel MOSFET |
| WFP840 | 制造商:WISDOM 制造商全稱:WISDOM 功能描述:N-Channel MOSFET |
發布緊急采購，3分鐘左右您將得到回復。