- 您現(xiàn)在的位置：買賣IC網 > PDF目錄48370 > APT5028BVR 20 A, 500 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PDF資料下載
參數(shù)資料
| 型號： | APT5028BVR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 500 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 61K |
| 代理商： | APT5028BVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
1
5
10
50 100
500
.01
.1
1
10
50
0
50
100
150
200
250
0
0.4
0.8
1.2
1.6
2.0
APT5028BVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
.5
.1
20
16
12
8
4
0
10,000
5,000
1,000
500
100
200
100
50
10
5
1
0.5
0.1
050-5615
Rev
B
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
I
D
= I
D
[Cont.]
TO-247 Package Outline
10
S
1mS
10mS
100mS
DC
100
S
相關PDF資料 |
PDF描述 |
|---|---|
| APT50GF60AR | 55 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| APT50GF60JU3 | 75 A, 600 V, N-CHANNEL IGBT |
| APT50GF60JU3 | 75 A, 600 V, N-CHANNEL IGBT |
| APT50GN60BDQ2 | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60BDQ2 | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5028BVRG | 功能描述:MOSFET N-CH 500V 20A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT5028SVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT5028SVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5028SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT5030AN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發(fā)布緊急采購，3分鐘左右您將得到回復。