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參數資料
| 型號： | APT5510JFLL |
| 元件分類： | JFETs |
| 英文描述： | 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 5/5頁 |
| 文件大小： | 94K |
| 代理商： | APT5510JFLL |
050-7191
Rev
A
3-2003
APT5510JFLL
Typical Performance Curves
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
D.U.T.
APT30DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
10 %
t
d(on)
90%
5 %
t
r
10 %
T
J
= 125 C
Drain Current
Gate Voltage
Drain Voltage
Switching Energy
90%
t
d(off)
T
J
= 125 C
Gate Voltage
Drain Voltage
Drain Current
10%
0
t
f
90%
Switching Energy
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT5510LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5513B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5513JFLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:550V RDS(ON)0.13Ohms ID(cont):35Amps|FREDFETs ( fast body diode) |
| APT5513LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5514DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 43A I(D) | CHIP |
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