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參數(shù)資料
| 型號： | APT75GN120B2G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, T-MAX, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 402K |
| 代理商： | APT75GN120B2G |
050-7607
Rev
C
10-2005
APT75GN120B2_L(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 1.0
R
G = 1.0, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, or =125°C
R
G = 1.0
L = 100H
70
60
50
40
30
20
10
0
180
160
140
120
100
80
60
40
20
0
50000
40000
30000
20000
10000
0
100000
80000
60000
40000
20000
0
800
700
600
500
400
300
200
100
0
300
250
200
150
100
50
0
25000
20000
15000
10000
5000
0
50000
40000
30000
20000
10000
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 1.0
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
10
40
70
100
130
160
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 800V
E
on2,150A
E
off,150A
VCE = 800V
VGE = +15V
TJ = 125°C
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
E
on2,150A
E
off,150A
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
相關(guān)PDF資料 |
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| APT75GN120B2 | 200 A, 1200 V, N-CHANNEL IGBT |
| APT75GN120L | 200 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT75GN120LG | 200 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT75GN120L | 200 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT75GN120B2 | 200 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT75GN120J | 功能描述:IGBT 1200V 124A 379W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT75GN120JDQ3 | 功能描述:IGBT 1200V 124A 379W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT75GN120JDQ3G | 功能描述:IGBT 1200V 124A 379W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT75GN120JR | 制造商:Microsemi Corporation 功能描述: |
| APT75GN120L | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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