| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| IPI65R110CFD | Infineon Technologies | MOSFET N-CH 650V 31.2A TO262 | 0 | 10,000:$3.86038 |
| IPB530N15N3 G | Infineon Technologies | MOSFET N-CH 150V 21A TO263-3 | 2,000 | 1,000:$0.79489 2,000:$0.74007 5,000:$0.71266 10,000:$0.68525 25,000:$0.67155 50,000:$0.65784 |
| IPI024N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 | 0 | 500:$2.38508 |
| IPD048N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | 0 | 2,500:$0.70322 |
| IPD50R500CE | Infineon Technologies | MOSF 500V 7.6A PG-TO252 | 0 | 2,500:$0.70281 5,000:$0.67678 12,500:$0.65075 25,000:$0.63774 62,500:$0.62472 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續漏極(Id) @ 25° C: | 31.2A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | 110 毫歐 @ 12.7A，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 1.3mA |
| 閘電荷(Qg) @ Vgs: | 118nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 3240pF @ 100V |
| 功率 - 最大: | 277.8W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-262-3，長引線，I²Pak，TO-262AA |
| 供應商設備封裝: | PG-TO262-3 |
| 包裝: | 管件 |