| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SP8M51TB1 | Rohm Semiconductor | MOSFET N/P-CH 100V SOP8 | 2,500 | 2,500:$0.60200 5,000:$0.57190 10,000:$0.54825 25,000:$0.53320 |
| SH8K4TB1 | Rohm Semiconductor | MOSFET N-CH DUAL 30V 9A SOP8 | 3,349 | 1:$1.68000 25:$1.32320 100:$1.19070 250:$1.03636 500:$0.92610 1,000:$0.72765 |
| SH8K4TB1 | Rohm Semiconductor | MOSFET N-CH DUAL 30V 9A SOP8 | 3,349 | 1:$1.68000 25:$1.32320 100:$1.19070 250:$1.03636 500:$0.92610 1,000:$0.72765 |
| SH8M5TB1 | Rohm Semiconductor | MOSFET N/P-CH 30V SOP8 | 4,878 | 1:$1.77000 25:$1.39800 100:$1.25820 250:$1.09512 500:$0.97860 1,000:$0.76890 |
| SH8M4TB1 | Rohm Semiconductor | MOSFET N+P 30V 9A/7A 8-SOIC | 0 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續漏極(Id) @ 25° C: | 3A，2.5A |
| 開態Rds（最大）@ Id, Vgs @ 25° C: | - |
| Id 時的 Vgs(th)（最大）: | - |
| 閘電荷(Qg) @ Vgs: | - |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝: | 8-SOP |
| 包裝: | 帶卷 (TR) |