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參數資料
型號： FZT796
廠商： Zetex Semiconductor
元件分類： 圓形連接器
英文描述： Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-22
中文描述： 進步黨硅平面中功率高增益晶體管
文件頁數： 1/2頁
文件大小： 78K
代理商： FZT796
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
*
200 Volt V
CEO
*
Gain of 250 at I
C
=0.3 Amps
*
Very low saturation voltage
APPLICATIONS
*
Battery powered circuits
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT696B
FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-200
V
Collector-Emitter Voltage
-200
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
-0.5
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
-200
V
I
C
=-100
μ
A
I
C
=-10mA*
V
(BR)CEO
-200
V
Emitter-Base
V
(BR)EBO
I
CBO
-5
V
I
E
=-100
μ
A
V
CB
=-150V
Collector Cut-Off Current
-0.1
μ
A
μ
A
Emitter Cut-Off Current
I
EBO
-0.1
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.3
-0.3
V
V
V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
I
C
=-200mA,I
B
=-20mA*
I
C
=-200mA,V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
I
=-50mA, V
CE
=-5V
f=50MHz
Base-EmitterSaturationVoltage V
BE(sat)
Base-EmitterTurn-OnVoltage
-0.95
V
V
BE(on)
h
FE
-0.67
V
Static Forward Current
Transfer Ratio
300
300
250
100
800
Transition Frequency
f
T
100
MHz
Input Capacitance
C
ibo
C
obo
t
on
t
off
225
pF
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
Output Capacitance
12
pF
Switching Times
100
3200
ns
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT796A
C
C
E
B
3 - 255
相關PDF資料
PDF描述
FZT796A PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT849 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
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相關代理商/技術參數
參數描述
FZT796A 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT223 PNP SILICON PLANAR MEDIUM
FZT796ATA 功能描述:兩極晶體管 - BJT PNP High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT796ATC 功能描述:兩極晶體管 - BJT PNP High Gain RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FZT849 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 制造商:Diodes Incorporated 功能描述:TRANSISTOR, NPN, SOT-223 制造商:Diodes Incorporated 功能描述:HIGH GAIN TRANSISTOR, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:3W; DC Collector Current:7A; DC Current Gain hFE:200; No. of Pins:4 ;RoHS Compliant: Yes
FZT849TA 功能描述:兩極晶體管 - BJT NPN High Ct Low Sat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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