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參數資料
型號: MURB820-1PBF
元件分類: 整流器
英文描述: 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
封裝: TO-262, 3 PIN
文件頁數: 1/8頁
文件大小: 196K
代理商: MURB820-1PBF
1
Case Styles
MUR820
TO-220AC
MURB820
D2PAK
MURB820-1
TO-262
VRRM
Peak Repetitive Peak Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current
8
A
Total Device, (Rated VR ), TC = 150°C
IFSM
Non Repetitive Peak Surge Current
100
IFM
Peak Repetitive Forward Current
16
(Rated VR , Square wave, 20 KHz), TC = 150°C
TJ, TSTG
Operating Junction and Storage Temperatures
-65 to 175
°C
Parameters
Max
Units
MUR820
MURB820
MURB820-1
Bulletin PD-20731 rev.
C 12/03
trr = 25ns
IF(AV) = 8Amp
VR = 200V
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°COperatingJunction Temperature
Features
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-
wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Ultrafast Rectifier
www.irf.com
相關PDF資料
PDF描述
MURF1620CT 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
MURS120/5-E3 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
MURS120/5T 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
MURS140 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
MV1666 330 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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