- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄272395 > TE28F800C3TD70 (INTEL CORP) 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號： | TE28F800C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 29/72頁 |
| 文件大小： | 1083K |
| 代理商： | TE28F800C3TD70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
35
8.0
Power and Reset Specifications
Intel
flash devices have a tiered approach to power savings that can significantly reduce overall
system power consumption. The Automatic Power Savings (APS) feature reduces power
consumption when the device is selected but idle. If CE# is deasserted, the flash enters its standby
mode, where current consumption is even lower. If RP# is deasserted, the flash enter deep power-
down mode for ultra-low current consumption. The combination of these features can minimize
memory power consumption, and therefore, overall system power consumption.
8.1
Active Power (Program/Erase/Read)
With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer
to the DC Characteristic tables for ICC current values. Active power is the largest contributor to
overall system power consumption. Minimizing the active current could have a profound effect on
system power consumption, especially for battery-operated devices.
8.2
Automatic Power Savings (APS)
Automatic Power Savings provides low-power operation during read mode. After data is read from
the memory array and the address lines are idle, APS circuitry places the device in a mode where
typical current is comparable to ICCS. The flash stays in this static state with outputs valid until a
new location is read.
8.3
Standby Power
When CE# is at a logic-high level (VIH), the flash memory is in standby mode, which disables
much of the device’s circuitry and substantially reduces power consumption. Outputs are placed in
a high-impedance state independent of the status of the OE# signal. If CE# transitions to a logic-
high level during Erase or Program operations, the device will continue to perform the operation
and consume corresponding active power until the operation is completed.
System engineers should analyze the breakdown of standby time versus active time and quantify
the respective power consumption in each mode for their specific application. This approach will
provide a more accurate measure of application-specific power and energy requirements.
8.4
Deep Power-Down Mode
The deep power-down mode is activated when RP# = VIL. During read modes, RP# going low de-
selects the memory and places the outputs in a high-impedance state. Recovery from deep power-
down requires a minimum time of tPHQV for read operations, and tPHWL/tPHEL for write operations.
During program or erase modes, RP# transitioning low aborts the in-progress operation. The
memory contents of the address being programmed or the block being erased are no longer valid as
the data integrity has been compromised by the abort. During deep power-down, all internal
circuits are switched to a low-power savings mode (RP# transitioning to VIL or turning off power
to the device clears the Status Register).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T101P3TAKE | TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE |
| T103STKWBE | TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, PANEL MOUNT-THREADED |
| T105KHWGE | TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, PANEL MOUNT-THREADED |
| T105KTDCGE | TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT |
| T107MTDAGE | TOGGLE SWITCH, SPDT, LATCHED AND MOMENTARY, 2A, 28VDC, THROUGH HOLE-RIGHT ANGLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TE28F800CEB120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CET120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CV-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| TE28F800CVB90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
發(fā)布緊急采購，3分鐘左右您將得到回復。