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參數資料
| 型號： | W26L04A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS靜態RAM) |
| 中文描述： | 128K的× 16位高速CMOS靜態RAM（128K的× 16位高速的CMOS靜態RAM）的 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 144K |
| 代理商： | W26L04A |
Preliminary W26L04A
- 2 -
TRUTH TABLE
CS
OE
WE
LB
UB
MODE
I/O1 I/O8
I/O9 I/O16
V
DD
CURRENT
I
SB
, I
SB1
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
I
DD
H
L
L
L
L
L
L
L
L
X
H
L
L
L
X
X
X
X
X
H
H
H
H
L
L
L
X
X
X
L
L
H
L
L
H
H
X
X
L
H
L
L
H
L
H
Not Selected
Output Disable
2 Bytes Read
Lower Byte Read
Upper Byte Read
2 Bytes Write
Lower Byte Write
Upper Byte Write
Output Disable
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
High Z
High Z
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
High Z
D
IN
High Z
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to +4.6
-0.5 to V
DD
+0.5
1.5
-65 to +150
0 to +70
-40 to +85
UNIT
V
V
W
°
C
°
C
°
C
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= -40 to 85
°
C for Industrial Grade, T
A
= 0 to 70
°
C for Commercial Grade)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
SYM.
V
IL
V
IH
I
LI
TEST CONDITIONS
-
-
V
IN
= V
SS
to V
DD
MIN.
-0.5
+2.0
-10
TYP.
-
-
-
MAX.
+0.8
V
DD
+0.3
+10
UNIT
V
V
μ
A
μ
A
Output Leakage Current
I
LO
V
I/O
= V
SS
to V
DD
Output Pins in High Z,
See Truth Table
I
OL
= +8.0 mA
I
OH
= -4.0 mA
-10
-
+10
Output Low Voltage
Output High Voltage
V
OL
V
OH
-
-
-
0.4
-
V
V
2.4
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