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參數資料
| 型號： | W26L04A |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS靜態RAM) |
| 中文描述： | 128K的× 16位高速CMOS靜態RAM（128K的× 16位高速的CMOS靜態RAM）的 |
| 文件頁數： | 4/10頁 |
| 文件大小： | 144K |
| 代理商： | W26L04A |
Preliminary W26L04A
- 4 -
AC Characteristics, continued
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= -40 to +85
°
C for Industrial Grade, T
A
= 0 to 70
°
C for Commercial Grade)
Read Cycle
PARAMETER
SYM.
W26L04A-10
W26L04A-12
UNIT
MIN.
10
MAX.
-
10
MIN.
12
MAX.
-
12
Read Cycle Time
Address Access Time
T
RC
T
AA
nS
nS
Chip Select Access Time
T
ACS
10
12
nS
Output Enable to Output Valid
T
OE
5
6
nS
UB, LB Access Time
Output Hold from Address Change
Chip Select to Output in Low Z
Chip Deselect to Output in High Z
T
BA
5
6
nS
T
OH
T
CLZ*
T
CHZ*
3
3
0
0
5
3
3
0
0
6
nS
nS
nS
Output Enable to Output in Low Z
Output Disable to Output in High Z
T
OLZ*
T
OHZ
*
T
BLZ*
5
6
nS
nS
UB, LB Select to Output in Low Z
nS
UB , LB Deselect to Output in High Z
T
BHZ*
5
6
nS
These parameters are sampled but not 100% tested.
Write Cycle
PARAMETER
SYM.
T
WC
T
CW
T
AW
T
AS
W26L04A-10
MIN.
10
9
9
0
W26L04A-12
MIN.
12
10
10
0
UNIT
nS
nS
nS
nS
MAX.
MAX.
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Address Setup Time
UB, LB Select to End of Write
Write Pulse Width
Write Recovery Time
T
BW
9
10
nS
T
WP
T
WR
9
0
10
0
nS
nS
CS, WE
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
T
DW
T
DH
T
WHZ*
6
0
3
6
7
0
3
7
nS
nS
nS
End of Write to Output Active
T
OW*
nS
These parameters are sampled but not 100% tested.
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