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參數(shù)資料
型號： W28F641TT80L
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PDSO48
封裝： 12 X 20 MM, TSOP-48
文件頁數(shù)： 16/31頁
文件大?。?/td> 389K
代理商： W28F641TT80L
W28F641B/T
4. ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Operating Temperature
During Read, Erase and Program ..................................................................................... -40
°
C to +85
°
C
(1)
Storage Temperature
During under Bias ................................................................................................................ -40
°
C to +85
°
C
During non Bias ................................................................................................................ .. -65
°
C to +125
°
C
Voltage On Any Pin
(except V
DD
and V
PP
) ................................................................................................... -0.5V to V
DD
+0.5V
(2)
V
DD
and V
DDQ
Supply Voltage................................................................................................. -0.2V to +3.9V
(2)
V
PP
Supply Voltage..................................................................................................... .... -0.2V to +12.6V
(2,3,4)
Output Short Circuit Current........................................................................................... ...................100 mA
(5)
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress
ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond
the "Operating Conditions" may affect device reliability.
Notes:
1. Operating temperature is for extended temperature product defined by this specification.
2. All specified voltages are with respect to V
SS
. Minimum DC voltage is -0.5V on input/output pins and -0.2V on V
DD
and V
PP
pins. During transitions, this level may undershoot to -2.0V for periods <20 nS. Maximum DC voltage on input/output pins is
V
DD
+0.5V, which, during transitions, may overshoot to V
DD
+2.0V for periods <20 nS.
3. Maximum DC voltage on V
PP
may overshoot to +13.0V for periods <20 nS.
4. V
PP
erase/program voltage is normally 2.7V to 3.6V. Applying 11.7V to 12.3V to V
PP
during erase/program can be done for a
maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. V
PP
may be connected to 11.7V to
12.3V for a total of 80 hours maximum.
5. Output shorted for no more than one second. No more than one output shorted at a time.
Operating Conditions
PARAMETER
SYM.
MIN.
TYP.
MAX.
UNIT
NOTE
Operating Temperature
TA
-40
+25
+85
°
C
V
DD
Supply Voltage
V
DD
2.7
3.0
3.6
V
1
I/O Supply Voltage
V
DDQ
2.7
3.0
3.6
V
1
V
PP
Voltage when Used as a Logic Control
V
PPH1
1.65
3.0
3.6
V
1
V
PP
Supply Voltage
Main Block Erase Cycling: V
PP
= V
PPH1
Parameter Block Erase Cycling: V
PP
= V
PPH1
Main Block Erase Cycling: V
PP
= V
PPH2
, 80 hrs.
Parameter Block Erase Cycling: V
PP
= V
PPH2
, 80 hrs.
V
PPH2
11.7
12
12.3
V
1, 2
100,000
Cycles
100,000
Cycles
1,000
Cycles
1,000
Cycles
Maximum V
PP
hours at V
PPH2
80
Hours
Notes:
1. See DC Characteristics tables for voltage range-specific specification.
2. Applying V
PP
= 11.7V to 12.3V during a erase or program can be done for a maximum of 1,000 cycles on the main blocks and
1,000 cycles on the parameter blocks. A permanent connection to V
PP
= 11.7V to 12.3V is not allowed and can cause
damage to the device.
- 16 -
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