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參數資料
型號: W28V400TT85C
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數: 11/48頁
文件大小: 1822K
代理商: W28V400TT85C
W28V400B/T
Publication Release Date: April 11, 2003
- 11 -
Revision A4
Read Identifier Codes Operation
The read identifier codes operation outputs the manufacturer code and device code (refer to Figure 4).
Using the manufacturer and device codes, the system CPU can automatically match the device with
its proper algorithms.
Reserved for
Future Implementation
Device Code
Manufacture Code
[A17-A0]
3FFFF
00002
00001
00000
Figure 4. Device Identifier Code Memory Map
Write
Writing commands to the CUI enable reading of device data and identifier codes. They also control
inspection and clearing of the status register. When V
DD
= V
DD1/2/3/4
and used. V
PP
= V
PPH1/2/3
, the CUI
additionally controls block erasure and word/byte write.
The Block Erase command requires appropriate command data and an address within the block to be
erased. The Word/Byte Write command requires the command and address of the location to be
written.
The CUI does not occupy an addressable memory location. A write occurs when #WE and #CE are
active (low). The address and data needed to execute a command are latched on the rising edge of
#WE or #CE, whichever occurs first. Standard microprocessor write timings are used.
Figures 15 and 16 illustrate #WE and #CE controlled write operations.
9. COMMAND DEFINITIONS
When V
PP
V
PPLK
, read operations from the status register, identifier codes, or blocks are enabled.
Setting V
PPH1/2/3
= V
PP
enables successful block erase and word/byte write operations.
Device operations are selected by writing specific commands into the CUI. Table 4 defines these
commands.
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