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參數資料
型號: W28V400TT85C
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY
中文描述: 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數: 44/48頁
文件大小: 1822K
代理商: W28V400TT85C
W28V400B/T
- 44 -
12. FLASH MEMORY W28V400 FAMILY DATA PROTECTION
Noises having a level exceeding the limit specified in this document may be generated under specific
operating conditions on some systems.
Such noises, when induced onto #WE signal or power supply, may be interpreted as false commands,
and which will cause undesired memory updating.
To protect the data stored in the flash memory against unwanted overwriting, systems operating with
the flash memory should have the following write protect designs, as appropriate:
1. Protecting data in specific block
By setting a #WP to low, only the boot block can be protected against overwriting.
Parameter and main blocks cannot be locked.
System program, etc., can be locked by storing them in the boot block.
When a high voltage is applied to #RESET, overwrite operation is enabled for all blocks.
2. Data protection through V
PP
When the level of V
PP
is lower than V
PPLK
(lockout voltage), write operation on the flash
memory is disabled. All blocks are locked and the data in the blocks are completely write
protected.
3. Data protection through #RESET
When the #RESET is kept low during power up and power down sequence such as voltage
transition, write operation on the flash memory is disabled, write protecting all blocks.
4. Noise rejection of #WE
Consider noise rejection of #WE in order to prevent false write command input.
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