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參數資料
| 型號： | W29F201 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 128K×16bit CMOS Flash Memory(128K×16位CMOS閃速存儲器) |
| 中文描述： | × 16位的CMOS 128K的閃存（128K的× 16位的CMOS閃速存儲器） |
| 文件頁數： | 4/23頁 |
| 文件大小： | 266K |
| 代理商： | W29F201 |
Preliminary W29F201
- 4 -
completed in a fast 100 mS (typical). The host system is not required to provide any control or timing
during this operation. The entire memory array will be erased to FF(hex). by the chip erase operation
if the boot block programming lockout feature is not activated. Once the boot block lockout feature is
activated, the chip erase function will erase all the sectors except the boot mode.
Sector Erase Operation
The three sectors, main memory and two parameters blocks, can be erased individually by initiating a
six-word command sequence. Sector address is latched on the falling WE edge of the sixth cycle
while the 30(hex) data input command is latched at the rising edge of WE. After the command
loading cycle, the device enters the internal sector erase mode, which is automatically timed and will
be completed in a fast 100 mS (typical). The host system is not required to provide any control or
timing during this operation. The device will automatically return to normal read mode after the erase
operation completed. Data polling and/or Toggle Bits can be used to detect end of erase cycle.
When the boot block lockout feature is inactivated, the boot block and the main memory block will be
erased together. Once the boot block is locked, only the main memory block will be erased by the
execution of sector erase operation.
Program Operation
The W29F201 is programmed on a word-by-word basis. Program operation can only change logical
data "1" to logical data "0" The erase operation (changed entire data in main memory and/or boot
block from "0" to "1" is needed before programming.
The program operation is initiated by a 4-word command cycle (see Command Codes for Word
Programming). The device will internally enter the program operation immediately after the word-
program command is entered. The internal program timer will automatically time-out (50
μ
S max. -
T
BP
) once completed and return to normal read mode. Data polling and/or Toggle Bits can be used to
detect end of program cycle.
Hardware Data Protection
The integrity of the data stored in the W29F201 is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) V
DD
Power Up/Down Detection: The programming operation is inhibited when V
DD
is less than
2.5V typical.
(3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) V
DD
power-on delay: When V
DD
has reached its sense level, the device will automatically time-out
5 mS before any write (erase/program) operation.
Data Polling (DQ
7
)- Write Status Detection
The W29F201 includes a data polling feature to indicate the end of a program or erase cycle. When
the W29F201 is in the internal program or erase cycle, any attempt to read DQ
7
of the last word
loaded will receive the complement of the true data. Once the program or erase cycle is completed,
DQ
7
will show the true data. Note that DQ
7
will show logical "0" during the erase cycle, and become
logical "1" or true data when the erase cycle has been completed.
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| W29GL032CB7A | 功能描述:IC FLASH 32MBIT 70NS 48TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
| W29GL032CB7ATR | 制造商:Winbond Electronics Corp 功能描述:PF, 32M-BIT, 4KB UNIFORM SECTO |
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| W29GL032CB7S | 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
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