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參數資料
| 型號： | W80NF06 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.0065OHM - 80A條TO-220/D2PAK/TO-247 STripFET二功率MOSFET |
| 文件頁數： | 4/14頁 |
| 文件大小： | 286K |
| 代理商： | W80NF06 |
Electrical characteristics
STP80NF06 - STB80NF06 - STW80NF06
4/14
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Table 4.
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown voltage
I
D
= 250 μA, V
GS
= 0
60
V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= Max rating
1
μA
V
DS
=Max rating,
T
C
=125°C
10
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A
0.0065
0.010
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Forward transconductance
V
DS
= 2.5V
,
I
D
=18A
20
S
C
iss
Input capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
3850
pF
C
oss
Output capacitance
800
pF
C
rss
Reverse transfer
capacitance
250
pF
Q
g
Total gate charge
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
115
150
nC
Q
gs
Gate-source charge
24
nC
Q
gd
Gate-drain charge
46
nC
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 10V
(see Figure 13)
25
85
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 13)
70
25
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, I
D
=80A
R
G
= 4.7
,
V
GS
= 10V
(see Figure 15)
85
75
110
ns
ns
ns
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