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參數(shù)資料
型號: W986416BH
廠商: WINBOND ELECTRONICS CORP
英文描述: 1M words x 16 bit x 4 Banks SDRAM(1M字 x 16 位 x 4 組同步動態(tài)RAM)
中文描述: 1M字× 16位× 4個銀行的SDRAM(100萬字× 16位× 4個組同步動態(tài)RAM)的
文件頁數(shù): 8/42頁
文件大小: 2061K
代理商: W986416BH
W986416BH
1M x 16 bit x 4 Banks SDRAM
Revision 1.4 Publication Release Date: July, 1999
- 8 -
NOTES:
1.
Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2.
All voltages are referenced to V
SS
3.
These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of
t
CK
and t
RC
.
4.
These parameters depend on the output loading conditions. Specified values are obtained with output open.
5.
Power up sequence is further described in the "Functional Description" section.
6.
AC TESTING CONDITIONS
Output Reference Level
Output Load
1.4V/1.4V
W986416BH is tested with 50pF output load.
(See diagram below)
2.4V/0.4V
Input Signal Levels
Transition Time (Rise and Fall) of Input Signal
Input Reference Level
2ns
1.4V
7. Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
1.4 V
output
Z=50 ohms
AC TEST LOAD
50 ohms
50 pF
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