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參數資料
| 型號： | W98M9640 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
| 中文描述： | 半導體分立器件，P通道功率MOS場效應晶體管 |
| 文件頁數： | 12/13頁 |
| 文件大小： | 228K |
| 代理商： | W98M9640 |
Microcircuit, Linear,
Dual MOSFET Drivers
,
Monolithic Silicon
SIZE
A
CAGE CODE
09WF0
W98M9640
DATE:
98-09-23
REVISION LEVEL
A
SHEET
12
TABLE III. RTA Electrical Performance Characteristics.
1/
Test
Symbol
Conditions 2/
T
J
= +25°C
unless otherwise specified
Limits
Units
Min
Max
Drain-to-source breakdown voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
μ
A
-200
V
Static drain-to-source on resistance
R
(DS)ON
V
GS
= -10 V, I
D
= 6.6 A
0.6
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
-2.0
-4.4
V
Forward transconductance
g
fs
V
DS
= -9 V, I
D
= 6.6 A
3.9
S
Drain-to-source leakage current
I
DSS
V
DS
= -200 V, V
GS
= 0 V
-133
μ
A
Gate-to-source forward leakage current
Gate-to-source reverse leakage current
I
GSS
V
GS
= -20 V
-110
nA
V
GS
= 20 V
110
Diode forward voltage
V
SD
I
S
= -11 A, V
GS
= 0 V
-5.2
V
1/ Devices supplied to this drawing will meet and only be tested at the level M of irradiation. When performing post irradiation
electrical measurements for any radiation level, T
A
= +25°C.
Radiation measurements at the level M are performed for:
Gamma total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3000 Rads(Si)
Neutron fluence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5x10
n/cm
/Mev
2/ All footnotes of Table II shall be applied here unless otherwise specified.
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