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參數(shù)資料
| 型號： | W98M9640 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
| 中文描述： | 半導體分立器件，P通道功率MOS場效應晶體管 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 228K |
| 代理商： | W98M9640 |
Microcircuit, Linear,
Dual MOSFET Drivers
,
Monolithic Silicon
SIZE
A
CAGE CODE
09WF0
W98M9640
DATE:
98-09-23
REVISION LEVEL
A
SHEET
4
TABLE II. Electrical Performance Characteristics.
Test
Symbol
Conditions
T
J
= +25°C
Group A
subgroups
Limits
Units
unless otherwise specified
Min
Typ
Max
Drain-to-source
breakdown voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
μ
A
Room
-200
V
Breakdown voltage
temperature coefficient
V
(BR)DS
S
/
T
J
I
D
= -1 mA
-0.20
V/°C
Static drain-to-source on
resistance
R
(DS)ON
V
GS
= -10 V, I
D
= 6.6 A
4/
0.50
Gate threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
-2.0
-4.0
V
Forward
transconductance
g
fs
V
DS
= -50 V, I
D
= 6.6 A
4/
4.1
S
Drain-to-source leakage
I
DSS
V
DS
= -200 V, V
GS
= 0 V
-100
μ
A
current
V
DS
= -160 V, V
GS
= 0 V
Max.
-500
Gate-to-source forward
leakage current
Gate-to-source reverse
leakage current
I
GSS
V
GS
= -20 V
Room
-100
nA
V
GS
= 20 V
100
Total gate charge
Q
g
I
D
= -11 A
44
nC
Gate-to-source charge
Q
gs
V
DS
= -160 V
7.1
Gate-to-drain (Miller)
charge
Q
gd
V
GS
= -10 V (see Figures 3.6 and
3.13) 4/
27
Turn-on delay time
t
d(ON)
V
DD
= -100 V
14
ns
Rise time
t
r
I
D
= -11 A
43
Turn-off delay time
t
d(off)
R
G
= 9.1
39
Fall time
t
f
R
G
= 8.6
(see Figure 2.10) 4/
38
Internal drain inductance
L
D
Between lead, 6 mm (0.25in) from
4.5
nH
Internal source
inductance
L
S
package and center of die contact
5A/
7.5
Input capacitance
C
ISS
V
GS
= 0 V
1200
pF
Output capacitance
C
OSS
V
DS
= -25 V
370
Reverse transfer
capacitance
See footnotes at end of table.
C
rSS
f = 1.0 MHz (see Figure 2.5)
81
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