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參數(shù)資料
| 型號： | AD7810 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | 2.7 V to 5.5 V, 2 us, 10-Bit ADC in 8-Lead microSOIC/DIP |
| 中文描述： | 2.7 V至5.5 V，2我們，10位ADC的8引腳microSOIC /文憑 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 142K |
| 代理商： | AD7810 |
AD7810
–3–
REV. A
Timing Characteristics
1, 2
Parameter
V
DD
= 5 V
6
10%
2.3
20
25
25
5
10
5
20
10
1
V
DD
= 3 V
6
10%
2.3
20
25
25
5
10
5
20
10
1
Units
μ
s (max)
ns (min)
ns (min)
ns (min)
ns (min)
ns (max)
ns (max)
ns (max)
ns (min)
μ
s (max)
Conditions/Comments
t
1
t
2
t
3
t
4
t
53
t
63
t
73
t
83, 4
Conversion Time Mode 1 Operation (High Speed Mode)
CONVST
Pulsewidth
SCLK High Pulsewidth
SCLK Low Pulsewidth
CONVST
Rising Edge to SCLK Rising Edge Set-Up Time
SCLK Rising Edge to D
OUT
Data Valid Delay
Data Hold Time after Rising Edge SCLK
Bus Relinquish Time After Falling Edge of SCLK
t
POWER UP
Power-Up Time After Rising Edge of
CONVST
NOTES
1
Sample tested to ensure compliance.
2
See Figures 14, 15 and 16.
3
These numbers are measured with the load circuit of Figure 1. They are defined as the time required for the o/p to cross 0.8 V or 2.4 V for V
DD
= 5 V
±
10% and
0.4 V or 2 V for V
DD
= 3 V
±
10%.
4
Derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back
to remove the effects of charging or discharging the 50 pF capacitor. This means that the time, t
8
, quoted in the Timing Characteristics is the true bus relinquish time
of the part and as such is independent of external bus loading capacitances.
Specifications subject to change without notice.
(–40
8
C to +105
8
C, V
REF
= +V
DD
, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS*
(T
A
= +25
°
C unless otherwise noted)
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Digital Input Voltage to GND
(
CONVST
, SCLK) . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
Digital Output Voltage to GND
(D
OUT
) . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
V
REF
to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
Analog Inputs
(V
IN+
, V
IN–
) . . . . . . . . . . . . . . . . . . . . –0.3 V, V
DD
+ 0.3 V
Storage Temperature Range . . . . . . . . . . . . –65
°
C to +150
°
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . +150
°
C
Plastic DIP Package, Power Dissipation . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . +125
°
C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . +50
°
C/W
Lead Temperature Soldering (10 sec) . . . . . . . . . . +260
°
C
I
OL
200
m
A
I
200
m
A
+1.6V
C
L
50pF
TO
OUTPUT
PIN
Figure 1. Load Circuit for Digital Output Timing Specifications
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 160
°
C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 56
°
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
MicroSOIC Package, Power Dissipation . . . . . . . . . . 450 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206
°
C/W
θ
JC
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44
°
C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . +215
°
C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . +220
°
C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
ORDERING GUIDE
Linearity
Error (LSB)
±
1 LSB
±
1 LSB
±
1 LSB
Temperature
Range
–40
°
C to +105
°
C
–40
°
C to +105
°
C
–40
°
C to +105
°
C
Branding
Information
Package
Options*
Model
AD7810YN
AD7810YR
AD7810YRM
N-8
SO-8
RM-8
C1Y
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AD7810YN | 2.7 V to 5.5 V, 2 us, 10-Bit ADC in 8-Lead microSOIC/DIP |
| AD7810YR | ECONOLINE: REC2.2-S_DR/H1 - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection- Internal SMD design- 100% Burned In- Efficiency to 75% |
| AD7813YRU | +2.7 V to +5.5 V, 400 kSPS 8-/10-Bit Sampling ADC |
| AD7813YN | +2.7 V to +5.5 V, 400 kSPS 8-/10-Bit Sampling ADC |
| AD7813YR | +2.7 V to +5.5 V, 400 kSPS 8-/10-Bit Sampling ADC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AD7810YN | 制造商:Analog Devices 功能描述:ADC Single SAR 350ksps 10-bit Serial 8-Pin PDIP 制造商:Rochester Electronics LLC 功能描述:10-BIT SERIAL SINGLE ADC I.C. - Bulk 制造商:Analog Devices 功能描述:IC 10-BIT ADC |
| AD7810YNZ | 功能描述:IC ADC 10BIT SRL HS LP 8DIP RoHS:是 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 模數(shù)轉(zhuǎn)換器 系列:- 其它有關(guān)文件:TSA1204 View All Specifications 標(biāo)準(zhǔn)包裝:1 系列:- 位數(shù):12 采樣率（每秒）:20M 數(shù)據(jù)接口:并聯(lián) 轉(zhuǎn)換器數(shù)目:2 功率耗散（最大）:155mW 電壓電源:模擬和數(shù)字 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:48-TQFP 供應(yīng)商設(shè)備封裝:48-TQFP（7x7） 包裝:Digi-Reel® 輸入數(shù)目和類型:4 個單端，單極；2 個差分，單極 產(chǎn)品目錄頁面:1156 (CN2011-ZH PDF) 其它名稱:497-5435-6 |
| AD7810YR | 功能描述:IC ADC 10BIT 2.7V 8-SOIC RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 模數(shù)轉(zhuǎn)換器 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:2,500 系列:- 位數(shù):12 采樣率（每秒）:3M 數(shù)據(jù)接口:- 轉(zhuǎn)換器數(shù)目:- 功率耗散（最大）:- 電壓電源:- 工作溫度:- 安裝類型:表面貼裝 封裝/外殼:SOT-23-6 供應(yīng)商設(shè)備封裝:SOT-23-6 包裝:帶卷 (TR) 輸入數(shù)目和類型:- |
| AD7810YRM | 制造商:Analog Devices 功能描述:ADC Single SAR 350ksps 10-bit Serial 8-Pin MSOP 制造商:Rochester Electronics LLC 功能描述:10-BIT SERIAL SINGLE ADC I.C. - Bulk |
| AD7810YRM-REEL | 制造商:Analog Devices 功能描述:ADC Single SAR 350ksps 10-bit Serial 8-Pin MSOP T/R |
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