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參數資料
| 型號： | W29C022 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 英文描述： | 256K x 8 CMOS FLASH MEMORY |
| 中文描述： | 256K × 8的CMOS閃存 |
| 文件頁數： | 10/20頁 |
| 文件大小： | 166K |
| 代理商： | W29C022 |
W29C022
- 10 -
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to 7.0
0 to +70
UNIT
V
°
C
°
C
V
V
V
Power Supply Voltage to V
SS
Potential
Operating Temperature
Storage Temperature
-65 to +150
D.C. Voltage on Any Pin to Ground Potential Except A9
Transient Voltage (<20 nS) on Any Pin to Ground Potential
Voltage on A9 and #OE Pin to Ground Potential
-0.5 to V
DD
+1.0
-1.0 to V
DD
+1.0
-0.5 to 12.5
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(V
DD
= 5.0V
±
10
%
, V
SS
= 0V, T
A
= 0 to 70
°
C)
PARAMETER
SYM.
I
CC
TEST CONDITIONS
LIMITS
TYP.
-
UNIT
MIN.
-
MAX.
50
#CE = #OE = V
IL
, #WE = V
IH
,
all DQs open
Address inputs = V
IL
/V
IH
,
at f = 5 MHz
#CE = #OE = V
IL
, #WE = V
IH
,
all DQs open
Address inputs = V
IL
/V
IH
,
at f = 2 MHz
#CE = V
IH
, all DQs open
Other inputs = V
IL
/V
IH
#CE = V
DD
-0.3V, all DQs open
Power Supply Current
-
-
30
mA
Standby V
DD
Current
(TTL input)
I
SB
1
I
SB
2
-
2
3
mA
Standby V
DD
Current
(CMOS input)
-
20
100
μ
A
μ
A
μ
A
V
V
V
V
V
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
CMOS
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH1
I
OH
= -400
μ
A
V
OH2
I
OH
= -100
μ
A; V
DD
= 4.5V
V
IN
= Vss to V
DD
V
IN
= Vss to V
DD
-
-
-
-
-
-
-
-
-
-
10
10
0.8
-
0.45
-
-
-
-
2.0
-
2.4
4.2
I
OL
= 2.0 mA
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相關代理商/技術參數 |
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|---|---|
| W29C040 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:512K X 8 CMOS FLASH MEMORY |
| W29C040-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C040-12N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| W29C040-90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C040-90B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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