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參數(shù)資料
型號(hào): W963L6ABN80E
廠商: WINBOND ELECTRONICS CORP
元件分類: SRAM
英文描述: GT 3C 3#4 PIN PLUG
中文描述: 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
封裝: 8 X 10 MM, 0.75 MM PITCH, TFBGA-48
文件頁(yè)數(shù): 11/30頁(yè)
文件大小: 1028K
代理商: W963L6ABN80E
W963L6ABN
AC Characteristics, Continued
Write Operation
-70
-80
PARAMETER
SYM.
Min.
Max.
Min.
Max.
UNIT
NOTES
Write Cycle Time
t
WC
70
-
80
-
nS
*1
Address Setup Time
t
AS
0
-
0
-
nS
*2
Address Hold Time
t
AH
35
-
40
-
nS
*2
CE1
Write Setup Time
t
CS
0
1000
0
1000
nS
CE1
Write Hold Time
t
CH
0
1000
0
1000
nS
WE
Setup Time
t
WS
0
-
0
-
nS
WE
Hold Time
t
WH
0
-
0
-
nS
LB
and
UB
Setup Time
t
BS
-5
-
-5
-
nS
LB
and
UB
Hold Time
t
BH
-5
-
-5
-
nS
OE
Setup Time
t
OES
0
1000
0
1000
nS
*3
t
OEH
30
1000
35
1000
nS
*3, *4
OE
Hold Time
t
OEH[ABS]
12
-
15
-
nS
*5
OE
High to
CE1
Low Setup Time
t
OHCL
-5
-
-5
-
nS
*6
OE
High to Address Hold Time
t
OHAH
-5
-
-5
-
nS
*7
CE1
Write Pulse Width
t
CW
45
-
50
-
nS
*1, *8
WE
Write Pulse Width
T
WP
45
-
50
-
nS
*1, *8
CE1
Write Recovery Time
t
WRC
10
-
15
-
nS
*1, *9
WE
Write Recovery Time
t
WR
10
1000
15
1000
nS
*1, *3, *9
Data Setup Time
t
DS
15
-
20
-
nS
Data Hold Time
t
DH
0
-
0
-
nS
CE1
High Pulse Width
t
CP
12
-
15
-
nS
*9
Publication Release Date: March 11, 2003
- 11 -
Revision A1
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