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參數資料
型號: W986408AH
廠商: WINBOND ELECTRONICS CORP
英文描述: 2M words x 8 bit x 4 Banks SDRAM(2M字 x 8 位 x 4 組同步動態RAM)
中文描述: 200萬字× 8位× 4個銀行的SDRAM(200萬字× 8位× 4組同步動態RAM)的
文件頁數: 13/45頁
文件大?。?/td> 1337K
代理商: W986408AH
W986408AH
2M x 8 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: May, 1998
- 13 -
Table 2 Address Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
n
n + 1
n + 2
n + 3
n + 4
n + 5
n + 6
n + 7
Burst Length
BL= 2 (disturb address is A0)
No address carry from A0 to A1
BL= 4 (disturb addresses are A0 and A1)
No address carry from A1 to A2
BL= 8 (disturb addresses are A0, A1 and A2)
No address carry from A2 to A3
.
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the
device. The disturb address is varied by the Burst Length as shown in Table 2.
.
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the
sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Burst Length
BL = 2
BL = 4
BL = 8
相關PDF資料
PDF描述
W986408BH 2M words x 8 bit x 4 Banks SDRAM(2M字 x 8 位 x 4 組同步動態RAM)
W986408CH 2M x 8BIT x 4 BANKS SDRAM
W986408CH-75 x8 SDRAM
W986408CH-8H x8 SDRAM
W986416AH 1M words x 16 bit x 4 Banks SDRAM(1M字 x 16 位 x 4 組同步動態RAM)
相關代理商/技術參數
參數描述
W986408CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M x 8BIT x 4 BANKS SDRAM
W986408CH-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:x8 SDRAM
W986408CH-8H 制造商:WINBOND 制造商全稱:Winbond 功能描述:x8 SDRAM
W986416CH 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M x 16 BIT x 4 BANKS SDRAM
W986416CH-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM