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參數(shù)資料
型號(hào): W986408AH
廠商: WINBOND ELECTRONICS CORP
英文描述: 2M words x 8 bit x 4 Banks SDRAM(2M字 x 8 位 x 4 組同步動(dòng)態(tài)RAM)
中文描述: 200萬(wàn)字× 8位× 4個(gè)銀行的SDRAM(200萬(wàn)字× 8位× 4組同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 8/45頁(yè)
文件大小: 1337K
代理商: W986408AH
W986408AH
2M x 8 bit x 4 Banks SDRAM
Revision 1.2 Publication Release Date: May, 1998
- 8 -
NOTES:
1.
Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2.
All voltages are referenced to V
SS
3.
These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values
of t
CK
and t
RC
.
4.
These parameters depend on the output loading conditions. Specified values are obtained with output open.
5.
Power up sequence is further described in the "Functional Description" section.
6.
AC TESTING CONDITIONS
Output Reference Level
Output Load
Input Signal Levels
1.4V/1.4V
See diagram B below
2.4V/0.4V
2ns
1.4V
Transition Time (Rise and Fall) of Input Signal
Input Reference Level
output
50pF
7. Transition times are measured between V
IH
and V
IL
.
8. t
HZ
defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
1.2k
0.87k
AC TEST LOAD (A)
1.4 V
output
Z=50 ohms
3.3 V
AC TEST LOAD (B)
50 ohms
50pF
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