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參數資料
型號： W986416CH-7
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： x16 SDRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數： 2/48頁
文件大小： 1647K
代理商： W986416CH-7
W986416DH
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11. CAPACITANCE................................................................................................................................14
12. DC CHARACTERISTICS.................................................................................................................15
13. AC CHARACTERISTICS.................................................................................................................16
14. TIMING WAVEFORMS....................................................................................................................19
Command Input Timing ..................................................................................................................19
Read Timing ...................................................................................................................................20
Control Timing of Input Data...........................................................................................................21
Control Timing of Output Data........................................................................................................22
Mode Register Set Cycle ................................................................................................................23
15. OPERATING TIMING EXAMPLE ....................................................................................................24
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ........................................................24
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)...............................25
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ........................................................26
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)...............................27
Interleaved Bank Write (Burst Length = 8) .....................................................................................28
Interleaved Bank Write (Burst Length = 8, Autoprecharge)............................................................29
Page Mode Read (Burst Length = 4, CAS Latency = 3).................................................................30
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) .......................................................31
Autoprecharge Read (Burst Length = 4, CAS Latency = 3)............................................................32
Autoprecharge Write (Burst Length = 4).........................................................................................33
Autorefresh Cycle ...........................................................................................................................34
Self-refresh Cycle ...........................................................................................................................35
Bust Read and Single Write (Burst Length = 4, CAS Latency = 3).................................................36
Power-down Mode..........................................................................................................................37
Auto-precharge Timing (Write Cycle) .............................................................................................38
Auto-precharge Timing (Read Cycle) .............................................................................................39
Timing Chart of Read to Write Cycle..............................................................................................40
Timing Chart of Write to Read Cycle..............................................................................................41
Timing Chart of Burst Stop Cycle (Burst Stop Command) .............................................................42
Timing Chart of Burst Stop Cycle (Precharge Command)..............................................................43
CKE/DQM Input Timing (Write Cycle) ............................................................................................44
CKE/DQM Input Timing (Read Cycle) ............................................................................................45
Self Refresh/Power Down Mode Exit Timing..................................................................................46
16. PACKAGE DIMENSION ..................................................................................................................47
54L TSOP (II)-400 mil.....................................................................................................................47
17. VERSION HISTORY........................................................................................................................48
相關PDF資料
PDF描述
W986416CH-75 x16 SDRAM
W986416CH-8H x16 SDRAM
W986432DH 512K ⅴ 4 BANKS ⅴ 32 BITS SDRAM
W986432AH 512K x 4 BANKS x 32 BITS SDRAM
W986432AH-55 x32 SDRAM
相關代理商/技術參數
參數描述
W986416CH-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W986416CH-8H 制造商:WINBOND 制造商全稱:Winbond 功能描述:x16 SDRAM
W986416DH 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M X 4 BANKS X 16 BITS SDRAM
W986416DH-5 制造商:Winbond Electronics Corp 功能描述:4M X 16 SYNCHRONOUS DRAM, 4.5 ns, 54 Pin Plastic SMT
W986416DH-55 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X1MX16|CMOS|TSOP|54PIN|PLASTIC
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