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參數資料
| 型號： | W98M964001EUX |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
| 中文描述： | 半導體分立器件，P通道功率MOS場效應晶體管 |
| 文件頁數： | 3/13頁 |
| 文件大小： | 228K |
| 代理商： | W98M964001EUX |
Microcircuit, Linear,
Dual MOSFET Drivers
,
Monolithic Silicon
SIZE
A
CAGE CODE
09WF0
W98M9640
DATE:
98-09-23
REVISION LEVEL
A
SHEET
3
2.0 Salient characteristics.
2.1 Maximum operating conditions. The maximum operating conditions shall be as specified in Table I.
2..2 Electrical performance characteristics:
2.2.1 The electrical performance characteristics shall be as specified in Table II.
2.2.2 The Typical characteristics diagrams shall be as specified in diagrams in Figure 2.
2.2.3 Radiation Tolerance Assurance(RTA) data for electrical performance characteristics shall be as specified in Table
III.
2.3 Design and construction. Microcircuits supplied to this WSD shall be as specified herein and on Figure 1.
2.4
Marking. Microcircuits supplied to this WSD shall be marked with the manufacturer's standard commercial PIN.
3.0 Regulatory requirements. This section is not utilized in this WSD.
TABLE I. Maximum operating conditions.
Continuous drain current I
D
, V
GS
@ 10 V,
T
C
= 25°C
T
C
= 100°C
Pulse drain current I
DM
1/
Power dissipation P
D
@ T
C
= 25°C
(PCB Mount)
Linear derating factor
(PCB Mount)
-11 A
-6.8 A
-44 A
125 W
3.0 W
1.0
W/°C
0.025 W/°C
Gate-to-Source voltage V
GS
Single pulse avalanche energy E
AS
2/
Avalanche current I
AR
1/
Repetitive avalanche energy E
AS
1/
Peak diode recovery dv/dt 3/
Operating junction temperature T
J
Storage temperature T
STG
Soldering temperature for 10 seconds
For notes 1/, 3/ and 2/, see footnotes of TABLE II.
±
20 V
700 mJ
-11 A
13 mJ
5.0 V/ns
-55°C to +150°C
-55°C to +150°C
300°C (1.6mm from case)
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