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參數資料
| 型號： | W98M964001EUX |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor |
| 中文描述： | 半導體分立器件，P通道功率MOS場效應晶體管 |
| 文件頁數： | 5/13頁 |
| 文件大小： | 228K |
| 代理商： | W98M964001EUX |
Microcircuit, Linear,
Dual MOSFET Drivers
,
Monolithic Silicon
SIZE
A
CAGE CODE
09WF0
W98M9640
DATE:
98-09-23
REVISION LEVEL
A
SHEET
5
TABLE II. Electrical performance characteristics- Continued.
Test
Symbol
Conditions
T
J
= +25°C
Group A
subgroups
Limits
Units
unless otherwise specified
Min
Typ
Max
Source-Drain Ratings :
Continuous source
current (body diode)
I
S
MOSFET symbol showing the
integral reverse p-n junction diode
5B/
Room
-11
A
Pulsed source current
(body diode)
I
SM
-44
Diode forward voltage
V
SD
I
S
= -11 A, V
GS
= 0 V
4/
-5.0
V
Reverse recovery time
t
rr
I
F
= -11 A, di/dt = 100 A/
μ
s 4/
250
300
ns
Reverse recovery charge
Q
rr
2.9
3.6
μ
C
Forward turn-on time
t
on
turn-on is dominated by L
S
+ L
D
intrinsic turn-on is neglible
1/ Repetitive rating; pulse width limited by max. Junction temperature (see Figure 2.11)
2/ VDD = -50 V, starting TJ = +25°C, L = 8.7 mH, RG = 25
, IAS = -11 A (see Figure 2.12).
3/ I
SD
≤
-11 A, di/dt
≤
150 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+150°C.
4/ Pulse width
≤
300
μ
s; duty cycle
≤
2%.
Insert A.
Insert B.
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