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參數資料
| 型號： | 2SK3886-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 12/18頁 |
| 文件大小： | 410K |
| 代理商： | 2SK3886-01MR |
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MS5F5814
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1.Scope
This specifies Fuji Power MOSFET 2SK3886-01MR
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
TO-220F
Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
VDS
120
V
DSX
90
V
VGS=-30V
Continuous Drain Current
ID
A
Pulsed Drain Current
I
DP
± 268
A
Gate-Source Voltage
VGS
± 30
V
I
AR
67
A
E
AS
mJ
E
AR
mJ
Maximum Drain-Source dV/dt
dV
DS/dt
kV/
s
Peak Diode Recovery dV/dt
dV/dt
kV/
s
Tc=25°C
2.16
Ta=25°C
Operating and Storage
Tch
150
C
Temperature range
T
stg
-55 to +150
C
Isolation Voltage
VISO
kVrms
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source
I
D=250
A
Breakdown Voltage BVDSS
VGS=0V
120
-
V
Gate Threshold
I
D=250
A
Voltage VGS(th)
VDS=VGS
3.0
-
5.0
V
Zero Gate Voltage
V
DS=120V
V
GS=0V
Tch=25
C
-
25
Drain Current IDSS
V
DS=96V
V
GS=0V
Tch=125
C
-
250
Gate-Source
V
GS= ± 30V
Leakage Current IGSS
VDS=0V
-
100
nA
Drain-Source
ID=33.5A
On-State Resistance RDS(on)
V
GS=10V
-
24.6
30.0
m
2
t=60sec
f=60Hz
Repetitive
Maximum Avalanche Energy
9.5
Note *3
20
VDS
120V
719.1
Note *2
5
Note *4
67
Drain-Source Voltage
A
Maximum Power Dissipation
P
D
95
W
Repetitive and Non-repetitive
Maximum Avalanche Current
Note *1
Non-Repetitive
Maximum Avalanche Energy
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