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參數資料
| 型號： | 2SK3886-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 13/18頁 |
| 文件大小： | 410K |
| 代理商： | 2SK3886-01MR |
DW
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H04-004-03
MS5F5814
4 / 18
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Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
Forward
ID=33.5A
Transconductance gfs
V
DS=25V
14
28
-
S
Input Capacitance
Ciss
VDS=75V
-
1880
2820
Output Capacitance
Coss
V
GS=0V
-
360
540
Reverse Transfer
f=1MHz
30
45
pF
Capacitance Crss
-
td(on)
Vcc=48V
-
20
30
Turn-On Time
tr
V
GS=10V
-
35
53
td(off)
ID=33.5A
-
50
75
ns
Turn-Off Time
tf
RGS=10
-
23
35
Total Gate Charge
QG
Vcc=60V
-
52
78
Gate-Source Charge
Q
GS
I
D=67A
-
16
24
nC
Gate-Drain Charge
QGD
VGS=10V
-
18
27
Reverse Diode
Description
Symbol
Conditions
min.
typ.
max.
Unit
Diode Forward
IF=67A
On-Voltage VSD
V
GS=0V
Tch=25
C
-
1.10
1.50
V
Reverse Recovery
IF=67A
Time trr
V
GS=0V
-
150
-
ns
Reverse Recovery
-di/dt=100A/
s
Charge Qrr
Tch=25
C
-
0.9
-
C
7.Thermal Resistance
Description
Symbol
min.
typ.
max.
Unit
Channel to Case
Rth(ch-c)
1.316
C/W
Channel to Ambient
Rth(ch-a)
58
C/W
Note *1 : Tch
150
C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25
C,I
AS=27A,L=1.32mH,Vcc=48V,RG=50,See Fig.1 and Fig.2
E
AS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.
Note *4 : I
F
-I
D,-di/dt=50A/
s,Vcc
BV
DSS,Tch
150
C
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