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參數資料
| 型號： | 2SK3886-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 3/18頁 |
| 文件大小： | 410K |
| 代理商： | 2SK3886-01MR |
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The heat sink should have a flatness within±30
m and roughness within 10m. Also, keep the tightening
torque within the limits of this specification.
Improper handling may cause isolation breakdown leading to a critical accident.
ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm)
We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to
evenly apply the compound and to eliminate any air voids.
Storage
The MOSFETs must be stored at a standard temperature of 5 to 35
C and relative humidity of 45 to 75%.
If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or
boiled water, since the chlorine in tap water may corrode the leads.
The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the
surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady.
The MOSFETs should not be stored on top of each other, since this may cause excessive external force on
the case.
The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause
presoldered connections to fail during later processing.
The MOSFETs should be stored in antistatic containers or shipping bags.
11.Appendix
These products do not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ).
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If you have any questions about any part of this Specification, please contact Fuji
Electric or its sales agent before using the product.
Neither Fuji nor its agents shall be held liable for any injury caused by using the products
not in accordance with the instructions.
The application examples described in this specification are merely typical uses of Fuji
Electric products.
This specification does not confer any industrial property rights or other rights, nor
constitute a license for such rights.
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| 2SK3891-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK3892 | 功能描述:MOSFET N-CH 200V 22A TO-220D RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3899-ZK-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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