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參數資料
| 型號： | 2SK3886-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 67 A, 120 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數： | 16/18頁 |
| 文件大小： | 410K |
| 代理商： | 2SK3886-01MR |
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Test
Testing methods and Conditions
Reference
Sampling
Acceptance
No.
It ems
Standard
number
1 High Temp.
Temperature : 150+0/-5°C
EIAJ
22
Storage
Test duration : 1000hr
ED4701/200
method 201
2 Low Temp.
Temperature : -55+5/-0°C
EIAJ
22
Storage
Test duration : 1000hr
ED4701/200
method 202
3 Temperature
Temperature : 85±2°C
EIAJ
Humidity
Relative humidity : 85±5%
ED4701/100
22
Storage
Test duration : 1000hr
method 103
4 Temperature
Temperature : 85±2°C
EIAJ
Humidity
Relative humidity : 85±5%
ED4701/100
22
BIAS
Bias Voltage : VDS(max) * 0.8
method 103
Test duration : 1000hr
5 Unsaturated
Temperature : 130±2°C
EIAJ
(0:1)
Pressurized
Relative humidity : 85±5%
ED4701/100
22
Vapor
Vapor pressure : 230kPa
method 103
Test duration : 48hr
6 Temperature
High temp.side : 150
5
C/30min.
EIAJ
Cycle
Low temp.side : -555
C/30min.
ED4701/100
22
RT : 5°C
35°C/5min.
method 105
Number of cycles : 100cycles
7 Thermal Shock
Fluid : pure water(running water)
High temp.side : 100+0/-5
C
EIAJ
22
Low temp.side : 0+5/-0
C
ED4701/300
Durat ion time : HT 5min, LT 5min
method 307
Number of cycles : 100cycles
8 Intermit tent
Tc=90degree
EIAJ
Operating
Tch
Tch(max.)
ED4701/100
22
Life
Test duration : 3000 cycle
method 106
9 HTRB
Temperature : Tch=150+0/-5°C
EIAJ
(Gate-source)
Bias Voltage : +VGS(max)
ED4701/100
22
(0:1)
Test duration : 1000hr
method 101
10 HTRB
Temperature : Tch=150+0/-5°C
EIAJ
(Drain-Source)
Bias Voltage : VDS(max)*1.0
ED4701/100
22
Test duration : 1000hr
method 101
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Failure Criteria
Symbols
Unit
Lower Limit
Upper Limit
Breakdown Voltage
BVDSS
LSL * 1.0
-----
V
Zero gate Voltage Drain-Source Current
IDSS
-----
USL * 2
A
Gate-Source Leakage Current
IGSS
-----
USL * 2
A
Gate Threshold Voltage
VGS(th)
LSL * 0.8
USL * 1.2
V
Drain-Source on-state Resistance
RDS(on)
-----
USL * 1.2
Forward Transconductance
gfs
LSL * 0.8
-----
S
Diode forward on-Voltage
VSD
-----
USL * 1.2
V
Marking
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item
Failure Criteria
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