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參數(shù)資料
| 型號： | APT15GF120JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 30 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 214K |
| 代理商： | APT15GF120JCU2 |
APT15GF120JCU2
APT
15GF120JCU2
–
Rev
0
Septem
ber
,2009
www.microsemi.com
3- 6
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
IGBT
0.8
RthJC
Junction to Case Thermal Resistance
SiC chopper Diode
1.65
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical IGBT Performance Curve
Cies
Cres
Coes
10
100
1000
10000
0
1020
3040
50
C,
Cap
aci
tance
(pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Ther
m
al
Im
pedance
(
°C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
5
10
15
20
25
IC, Collector Current (A)
Operating Frequency vs Collector Current
Fm
ax,
O
p
erati
n
g
Fr
equ
e
ncy
(kHz
)
VCE = 600V
D = 50%
RG = 33
TJ = 125°C
TC= 75°C
Emitter
Gate
Collector
Cathode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT15GN120BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT15GN120BDQ1G | 功能描述:IGBT 1200V 45A 195W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GN120K | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT15GN120KG | 功能描述:IGBT 1200V 45A 195W TO220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT15GN120SDQ1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
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