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參數資料
型號: APT50GT60BRDQ2
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 110 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數: 9/9頁
文件大小: 256K
代理商: APT50GT60BRDQ2
052-6272
Re
v
C
6-2008
APT50GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
TO-247PackageOutline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure32.DiodeTestCircuit
Figure33,DiodeReverseRecoveryWaveformandDefinitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
trr/Qrr
Waveform
Vr
APT40GT60BR
相關PDF資料
PDF描述
APT50M60JVR 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60JVR 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M65LFLL 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M65LFLLG 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT50M65LFLL 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
相關代理商/技術參數
參數描述
APT50GT60BRDQ2G 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GT60BRG 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GT60SR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60SRG 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50M38JFLL 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*