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參數資料
| 型號： | U632H16SK25G1 |
| 元件分類： | SRAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM, 25 ns, PDSO28 |
| 封裝： | 0.300 INCH, GREEN, SOP-28 |
| 文件頁數： | 11/15頁 |
| 文件大小： | 229K |
| 代理商： | U632H16SK25G1 |
5
April 7, 2005
U632H16
ta(A)
Previos Data Valid
Read Cycle 1: Ai-controlled (during Read cycle: E = G = VIL, W = VIH)f
Read Cycle 2: G-, E-controlled (during Read cycle: W = VIH)g
No.
Switching Characteristics
Write Cycle
Symbol
25
35
45
Unit
Alt. #1 Alt. #2
IEC
Min. Max. Min. Max. Min. Max.
12 Write Cycle Time
tAVAV
tcW
25
35
45
ns
13 Write Pulse Width
tWLWH
tw(W)
20
30
35
ns
14 Write Pulse Width Setup Time
tWLEH
tsu(W)
20
30
35
ns
15 Address Setup Time
tAVWL
tAVEL
tsu(A)
000
ns
16 Address Valid to End of Write
tAVWH
tAVEH tsu(A-WH) 20
30
35
ns
17 Chip Enable Setup Time
tELWH
tsu(E)
20
30
35
ns
18 Chip Enable to End of Write
tELEH
tw(E)
20
30
35
ns
19 Data Setup Time to End of Write
tDVWH
tDVEH
tsu(D)
12
18
20
ns
20 Data Hold Time after End of Write
tWHDX
tEHDX
th(D)
000
ns
21 Address Hold after End of Write
tWHAX
tEHAX
th(A)
000
ns
22 W LOW to Output in High-Zh, i
tWLQZ
tdis(W)
10
13
15
ns
23 W HIGH to Output in Low-Z
tWHQX
ten(W)
555
ns
ta(A)
tcR
Address Valid
tv(A)
Ai
DQi
Output
(1)
(2)
(9)
Ai
E
G
DQi
Output
tdis(E)
tcR
ta(E)
ten(E)
ten(G)
ta(G)
tdis(G)
Address Valid
Output Data Valid
High Impedance
ICC
ACTIVE
STANDBY
tPD
tPU
(1)
(3)
(4)
(5)
(7)
(6)
(8)
(10)
(11)
(2)
Output Data Valid
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